Activation volume for arsenic diffusion in germanium
نویسندگان
چکیده
منابع مشابه
Diffusion and Activation of Arsenic in Silicon Germanium Alloys
properties as a n-type dopant in Silicon Germanium (SiGe), to enable the fabrication of a wide range of devices. With the recent success of the strained Si MOSFET, new markets are expected to be developed based upon strained Si/relaxed SiGe CMOS circuits. An understanding of n-type dopant diffusion in SiGe, specifically the formation of the source/drain regions in the NMOS and the n-body region...
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Declaration This thesis is a presentation of my original research work. Wherever contributions of others are involved, every effort is made to indicate this clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions.Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm technology node in accorda...
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Manganese diffusion in monocrystalline germanium A. Portavoce,a,b,⇑ O. Abbes, Y. Rudzevich, L. Chow, V. Le Thanh and C. Girardeaux CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France Aix-Marseille Université, IM2NP, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France CNRS, CINAM, Campus de Luminy Case 913, 13288 Marseille, France Department of ...
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A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...
متن کاملIntrinsic and extrinsic diffusion of indium in germanium
Diffusion experiments with indium In in germanium Ge were performed in the temperature range between 550 and 900 °C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are a...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.116944